论文标题
合金V中的MNBI $ _2 $ TE $ _4 $用于强大的铁磁耦合和量子异常效果
Alloying V in MnBi$_2$Te$_4$ for Robust Ferromagnetic Coupling and Quantum Anomalous Hall Effect
论文作者
论文摘要
二维磁性拓扑绝缘子MNBI $ _2 $ _2 $ _4 $限制实现稳定的量子异常霍尔效应（qahe）[y。 Deng等人，Science 367，895（2020）]。通过密度函数理论计算，我们证明了将AFM耦合调整为MNBI中的铁磁耦合$ _2 $ _2 $ te $ _4 $ te $ _4 $ films，通过将大约50％V与Mn合金合金。结果，可以实现QAHE，而无需与均匀或奇数的隔层层交替。这提供了一种实用的策略，可以在Ultrathin mnbi中获得强大的Qahe $ _2 $ te $ _4 $ tims，使它们对技术创新有吸引力。
The intrinsic antiferromagnetic (AFM) interlayer coupling in two-dimensional magnetic topological insulator MnBi$_2$Te$_4$ places a restriction on realizing stable quantum anomalous Hall effect (QAHE) [Y. Deng et al., Science 367, 895 (2020)]. Through density functional theory calculations, we demonstrate the possibility of tuning the AFM coupling to the ferromagnetic coupling in MnBi$_2$Te$_4$ films by alloying about 50% V with Mn. As a result, QAHE can be achieved without alternation with the even or odd septuple layers. This provides a practical strategy to get robust QAHE in ultrathin MnBi$_2$Te$_4$ films, rendering them attractive for technological innovations.
