论文标题
氧化锌纳米线的亚毫米可见门控
Sub-Millisecond Visible-Light Gating of a Zinc Oxide Nanowire
论文作者
论文摘要
半导体纳米线是许多纳米级电和神经形态电路的基础。在这里，我们展示了一种简单的布置，其中，乙醇吸附的ZnO单纳米线（使用介电粒子在金电极之间沉积的ZnO单纳米线在被可见光激活时都会显示出显着的电阻变化。在这里，我们观察到，两个稳定的欧姆状态之间的过渡时间尺度，一个在黑暗中，另一个在单个纳米线中的照明状态中可能发生在亚亚列级中，这比我们先前报道的散装Zno薄膜中先前报道的切换时间尺度低7个数量级。基于纳米线表面的氧分子的吸附 - 吸附动力学，提出了光激活电阻切换机制的数学模型。
Semiconductor nanowires are the building blocks of many nanoscale electrical and neuromorphic circuits. Here, we demonstrate a simple arrangement wherein an ethanol-adsorbed ZnO single nanowire, deposited between gold electrodes using dielectrophoresis exhibits significant change in resistance when activated by visible light. Here we have observed that the transition timescale between two stable ohmic states, one in the dark and the other in the illuminated regime in a single nanowire can occur in the submillisecond order, which is 7 orders of magnitude lower than our previously reported switching timescale in bulk ZnO thin films. A mathematical model of the light activated resistance switching mechanism is proposed based on the adsorption-desorption kinetics of oxygen molecules at the surface of the nanowires.
