论文标题
由wte $ _2 $的表面电子掺杂驱动的两个相变
Two phase transitions driven by surface electron-doping in WTe$_2$
论文作者
论文摘要
wte $ _2 $是一种多功能量子材料，表现出许多紧急阶段，其中载体密度的调整起着重要作用。在这里，我们在\ textit {intu}电子掺杂上演示了WTE $ _2 $的电子结构的两个非单调变化。第一阶段过渡是根据顶部WTE $ _2 $ layer的剪切位移来解释的，该剪切位移实现了通常在批量WTE $ _2 $中未发现的局部晶体结构。第二相跃迁与杂交和电场之间的掺杂原子与宿主之间的更强相互作用有关。这些结果表明，电子兴奋剂可以驱动大量WTE $ _2 $的结构和电子变化，这对实现异性空间和设备的非平凡带结构的变化有影响。
WTe$_2$ is a multifunctional quantum material exhibiting numerous emergent phases in which tuning of the carrier density plays an important role. Here we demonstrate two non-monotonic changes in the electronic structure of WTe$_2$ upon \textit{in-situ} electron doping. The first phase transition is interpreted in terms of a shear displacement of the top WTe$_2$ layer, which realizes a local crystal structure not normally found in bulk WTe$_2$. The second phase transition is associated with stronger interactions between the dopant atoms and the host, both through hybridization and electric field. These results demonstrate that electron-doping can drive structural and electronics changes in bulk WTe$_2$ with implications for realizing nontrivial band structure changes in heterointerfaces and devices.
