论文标题
用于固态量子技术的Erbium植入硅
Erbium implanted silicon for solid-state quantum technologies
论文作者
论文摘要
Erbium植入硅作为量子技术平台具有电信和集成电路（IC）处理的兼容性。 ER植入的Si具有3x1017 cm-3的ER植入Si的电子自旋相干时间在5 k时为〜10μs，自旋回波衰变曲线显示出强烈的调制，这是由于与29Si nuclei的超级杂志相互作用而引起的。三个独立的测量：光致发光（PL），PL寿命和光释放的电子旋转共振（ESR）的温度淬灭，均表明存在先前未报告的ER相关缺陷状态，这可以促进来自ER退出状态的非辐射放松。这给出了类似于钻石NV中心的能级方案，这意味着Zeeman基态的光学自旋极化和ER植入的Si中ER量子的高温运行可能是可行的。在20 mk时，ER浓度为1017 cm-3的超导型NBN元素元素微孔子和ER植入Si之间的集体耦合强度为〜1 MHz。
Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit (IC) processing compatibility. The electron spin coherence time of Er implanted Si with an Er concentration of 3X1017 cm-3 is measured to be ~10 μs at 5 K and the spin echo decay profile displays strong modulation due to super-hyperfine interaction with 29Si nuclei. Three independent measurements: temperature quenching of photoluminescence (PL), PL lifetime and photo-illuminated electron spin resonance (ESR) all indicate the presence of a previously unreported Er related defect state which can facilitate non-radiative relaxation from the Er exited state. This gives an energy level scheme analogous to that of the diamond NV centre, and implies that optical spin polarisation of the Zeeman ground state and high temperature operation of Er qubits in Er implanted Si may be feasible. The collective coupling strength between a superconducting NbN lumped-element microresonator and Er implanted Si with an Er concentration of 1017 cm-3 at 20 mK was ~ 1 MHz.
