论文标题
铁磁MNSN单层在硅底物上生长
Ferromagnetic MnSn monolayer epitaxially grown on silicon substrate
论文作者
论文摘要
二维（2D）铁磁材料在应用中表现出有希望的潜力，例如Spintronics设备。在单层限制下，在硅底物上生长外延磁性膜实际上很重要，但具有挑战性。在这项研究中，我们意识到MNSN单层在Si（111）底物上的外在增长，其原子较薄的Sn/Si（111） - $ 2 \ sqrt {3} \ times2 \ times2 \ sqrt {3} $ - buffer层 - buffer层，并控制了Mnsn厚度，并控制了含有鼠标含量的MNSN厚度。我们在MNSN单层中发现了curie温度（TC）的Ferromagnetism（〜54 K）。随着MNSN膜的生长到4个单层，TC相应地增加到〜235K。 sn/si（111） - $ 2 \ sqrt {3} \ times2 \ sqrt {3} $与硅完全兼容，因此在mnsn，sn和si之间形成了鲜明的接口。该系统提供了一个新的平台，用于探索2D铁磁磁性，将磁性单层集成到基于硅的技术并进行工程Spintronics异质结构。
Two-dimensional (2D) ferromagnetic materials have been exhibiting promising potential in applications, such as spintronics devices. To grow epitaxial magnetic films on silicon substrate, in the single-layer limit, is practically important but challenging. In this study, we realized the epitaxial growth of MnSn monolayer on Si(111) substrate, with an atomically thin Sn/Si(111)-$2\sqrt{3}\times2\sqrt{3}$- buffer layer, and controlled the MnSn thickness with atomic-layer precision. We discovered the ferromagnetism in MnSn monolayer with the Curie temperature (Tc) of ~54 K. As the MnSn film is grown to 4 monolayers, Tc increases accordingly to ~235 K. The lattice of the epitaxial MnSn monolayer as well as the Sn/Si(111)-$2\sqrt{3}\times2\sqrt{3}$ is perfectly compatible with silicon, and thus an sharp interface is formed between MnSn, Sn and Si. This system provides a new platform for exploring the 2D ferromagnetism, integrating magnetic monolayers into silicon-based technology, and engineering the spintronics heterostructures.
