论文标题
基于宏观Maxwell-Bloch方程的光电设备模拟
Optoelectronic device simulations based on macroscopic Maxwell-Bloch equations
论文作者
论文摘要
由于其直觉，柔韧性和相对数值效率，宏观Maxwell-Bloch（MB）方程是一种广泛使用的半经典和半光谱学模型，可描述由离散级别量子系统组成的媒体中的光学传播和相干的光 - 互动。这篇综述着重于该模型在高级光电设备中的应用，例如量子级联和量子点激光器。 Bloch方程在这里被视为具有两个或多个离散能级的驱动量子系统的密度矩阵模型，其中lindblad项包含了耗散。此外，严格得出了半导体波导结构和光纤的一维MB方程。提出了特殊的分析解决方案和合适的数值方法。由于MB方程在计算电动力学中的重要性，因此在有和没有旋转波近似的不同数值方案的比较上都重点放在了比较不同的数值方案上。讨论了可能在半导体结构中相关的其他效果的实施，例如空间孔燃烧，不均匀的拓宽和本地场校正。最后，简要解决了与微观模型和适当的lindblad形式主义扩展的链接。
Due to their intuitiveness, flexibility and relative numerical efficiency, the macroscopic Maxwell-Bloch (MB) equations are a widely used semiclassical and semi-phenomenological model to describe optical propagation and coherent light-matter interaction in media consisting of discrete-level quantum systems. This review focuses on the application of this model to advanced optoelectronic devices, such as quantum cascade and quantum dot lasers. The Bloch equations are here treated as a density matrix model for driven quantum systems with two or multiple discrete energy levels, where dissipation is included by Lindblad terms. Furthermore, the one-dimensional MB equations for semiconductor waveguide structures and optical fibers are rigorously derived. Special analytical solutions and suitable numerical methods are presented. Due to the importance of the MB equations in computational electrodynamics, an emphasis is placed on the comparison of different numerical schemes, both with and without the rotating wave approximation. The implementation of additional effects which can become relevant in semiconductor structures, such as spatial hole burning, inhomogeneous broadening and local-field corrections, is discussed. Finally, links to microscopic models and suitable extensions of the Lindblad formalism are briefly addressed.
