论文标题
Crystalline Moo $ _3 $的直接转换为几层MOS $ _2 $
Direct transformation of crystalline MoO$_3$ into few-layers MoS$_2$
论文作者
论文摘要
我们通过在相对较低的温度下通过硫化，通过晶体钼Mos $ _2 $ $ _2 $（MOO $ _3 $）的直接转换来制造大面积薄面积的MOS $ _2 $层。获得的MOS2纸是多晶（〜10-20 nm单晶域大小），面积高达300x300 um $ $^2 $，厚度为2-4层，并显示出明显的P型行为。合成膜的特征是互补技术的组合：拉曼光谱，X射线衍射，透射电子显微镜和电子传输测量。
We fabricate large-area atomically thin MoS$_2$ layers through the direct transformation of crystalline molybdenum MoS$_2$ (MoO$_3$) by sulfurization at relatively low temperatures. The obtained MoS2 sheets are polycrystalline (~10-20 nm single-crystal domain size) with areas of up to 300x300 um$^2$ with 2-4 layers in thickness and show a marked p-type behaviour. The synthesized films are characterized by a combination of complementary techniques: Raman spectroscopy, X-ray diffraction, transmission electron microscopy and electronic transport measurements.
