论文标题
$^{28} $ SI中T中心的表征
Characterization of the T center in $^{28}$Si
论文作者
论文摘要
硅是两个独立的领先量子技术平台的主机：集成的硅光子学以及长寿命的旋转量子。正在进行的搜索搜索理想的光子旋转界面，能够将这两种方法杂交到单个硅平台中，提供实质上扩展的功能。已知许多硅缺陷具有自旋选择性的光学转变，尽管其中很少有人在高度理想的电信带中，而那些通常不会强烈地伴随着光线。在这里，我们表征了硅的T中心，这是一种高度稳定的硅缺陷，该缺陷支持短暂的绑定激子，该激素在重组后会在电信O波段中发出光。在$^{28} $ si中的T中心的首次研究中，我们介绍了零声子线的温度依赖性，报告集合零声子线范围狭窄至33（2）MHz，并阐明了绑定激元的激发态频谱。磁发光与磁共振结合使用，用于观察T中心的十二个不同的定向子集，由于界面激子的孔自旋的各向异性G系数，它们由于各向异性G系数而独立地寻址。因此，T中心是硅的两个领先量子技术平台杂交的有前途的竞争者。
Silicon is host to two separate leading quantum technology platforms: integrated silicon photonics as well as long-lived spin qubits. There is an ongoing search for the ideal photon-spin interface able to hybridize these two approaches into a single silicon platform offering substantially expanded capabilities. A number of silicon defects are known to have spin-selective optical transitions, although very few of these are known to be in the highly desirable telecommunications bands, and those that do often do not couple strongly to light. Here we characterize the T center in silicon, a highly stable silicon defect which supports a short-lived bound exciton that upon recombination emits light in the telecommunications O-band. In this first study of T centers in $^{28}$Si, we present the temperature dependence of the zero phonon line, report ensemble zero phonon linewidths as narrow as 33(2) MHz, and elucidate the excited state spectrum of the bound exciton. Magneto-photoluminescence, in conjunction with magnetic resonance, is used to observe twelve distinct orientational subsets of the T center, which are independently addressable due to the anisotropic g factor of the bound exciton's hole spin. The T center is thus a promising contender for the hybridization of silicon's two leading quantum technology platforms.
