论文标题
超薄镍硅硅形成过程中成分和结构的原位纳米级表征
In-situ Nanoscale Characterization of Composition and Structure during Formation of Ultrathin Nickel Silicide
论文作者
论文摘要
我们使用原位高分辨率离子散射和高分辨率透射电子显微镜表征了超薄镍硅硅硅硅硅硅硅硅硅硅硅硅硅硅硅硅的组成和结构。我们显示了以离散步骤发生的过渡，其中在230 oC到290 oC的温度范围内观察到中间相。发现该中间相的膜组成为50％Ni：50％Si，没有远距离结构的证据，表明该膜是均匀的单硅烷NISI相。最后阶段与二胺NISI2相似，但略有偏置计量的组成为38％Ni和62％Si。沿着[100]轴，在完美的对齐中发现了膜和底物的晶格。由于硅化硅的外延生长，检测到膜的C晶格常数的收缩率为0.7-1％。
We characterize composition and structure of ultrathin nickel silicide during formation from 3 nm Ni films on Si(100) using in-situ high resolution ion scattering and high resolution transmission electron microscopy. We show the transition to occur in discrete steps, in which an intermediate phase is observed within a narrow range of temperature from 230 oC to 290 oC. The film composition of this intermediate phase is found to be 50% Ni:50% Si, without evidence for long-range structure, indicating the film to be a homogeneous monosilicide NiSi phase. The final phase is resemblant of the cubic disilicide NiSi2, but with slightly off-stoichiometric composition of 38% Ni and 62% Si. Along the [100] axis, the lattices of the film and the substrate are found in perfect alignment. Due to the epitaxial growth of the silicide, a contraction of the c lattice constant of the film by 0.7-1% is detected.
