论文标题
通过界面应变和无序调整多效多层的磁电特性
Tuning the magneto-electrical properties of multiferroic multilayers through interface strain and disorder
论文作者
论文摘要
设计和制造人工设计的超晶格以诱导不同的生长机制和结构特征。 DC溅射用于生长铁磁(la $ _ {0.8} $ ba $ _ {0.2} $ mno $ _3 $) / ferroelectric(ba $ _ {0.25} $ sr $ _ {0.75} $ _ {0.75} $我们系统地修改了铁磁层的厚度,以分析对具有不同结构特征的超晶格的尺寸和结构效应。晶体结构的特征是X射线衍射和透射电子显微镜。通过鱿鱼磁力测定法和电阻测量研究了磁性和电子性能。结果表明,应变和结构障碍都可以显着影响系统的物理特性。压缩应变倾向于增加磁相互作用之间的竞争,从而减少样品的铁磁磁性和通过电子波相互作用的电荷载体定位。拉伸应变降低了电荷载体定位,从而增加了铁磁过渡温度。结构缺陷对磁性特性的影响比对传输特性的影响更大,从而降低了铁磁过渡温度,同时增加了超晶格的磁性硬度。这些结果有助于进一步了解应变和界面效应在基于锰矿的多效系统的磁性和运输特性中的作用。
Artificially engineered superlattices were designed and fabricated to induce different growth mechanisms and structural characteristics. DC sputtering was used to grow ferromagnetic (La$_{0.8}$Ba$_{0.2}$MnO$_3$) / ferroelectric (Ba$_{0.25}$Sr$_{0.75}$TiO$_3$ or BaTiO$_3$) superlattices. We systematically modified the thickness of the ferromagnetic layer to analyze dimensional and structural effects on the superlattices with different structural characteristics. The crystalline structure was characterized by X-Ray diffraction and transmission electron microscopy. The magnetic and electronic properties were investigated by SQUID magnetometry and resistance measurements. The results show that both strain and structural disorder can significantly affect the physical properties of the systems. Compressive strain tends to increase the competition between the magnetic interactions decreasing the ferromagnetism of the samples and the localization of the charge carrier through the electron-phonon interaction. Tensile strain reduces the charge carrier localization, increasing the ferromagnetic transition temperature. Structural defects have a stronger influence on the magnetic properties than on the transport properties, reducing the ferromagnetic transition temperature while increasing the magnetic hardness of the superlattices. These results help to further understand the role of strain and interface effects in the magnetic and transport properties of manganite based multiferroic systems.