论文标题

单轴紧张的石墨烯中的异常浮雕隧道

Anomalous Floquet tunneling in uniaxially strained graphene

论文作者

Betancur-Ocampo, Yonatan, Majari, Parisa, Espitia, Diego, Leyvraz, Francois, Stegmann, Thomas

论文摘要

石墨烯中电子的应变工程和光子辅助隧道的相互作用被认为是为了产生非典型的运输现象。单轴应变和时间周期性电势障碍的组合有助于控制颗粒的传播,以获得广泛的可调参数。通过使用紧密的方法,弹性理论和浮子散射,我们发现单轴应变的边带中最大传输的角移动,使镜子对称相对于正常发射率,这被称为异常浮雕隧道。我们表明,电子隧道在很大程度上取决于屏障宽度,入射角,单轴应变以及时间周期性电位参数的调整。对屏障宽度和振荡振幅的足够调节可用于选择边带中的传输。这些发现对于通过在多个纳米技术应用中使用的光子辅助隧道来控制电子电流很有用。

The interplay of strain engineering and photon-assisted tunneling of electrons in graphene is considered for giving rise to atypical transport phenomena. The combination of uniaxial strain and a time-periodic potential barrier helps to control the particle transmission for a wide range of tunable parameters. With the use of the tight-biding approach, the elasticity theory, and the Floquet scattering, we found an angular shift of the maximum transmission in the sidebands for uniaxial strains breaking the mirror symmetry with respect to the normal incidence, which is called anomalous Floquet tunneling. We show that electron tunneling depends strongly on the barrier width, incident angle, uniaxial strain, and the tuning of the time-periodic potential parameters. An adequate modulation of the barrier width and oscillation amplitude serves to select the transmission in the sidebands. These findings can be useful for controlling the electron current through the photon-assisted tunneling being used in multiple nanotechnological applications.

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