论文标题

基于gan量子点的量子增强光电器

Quantum-enhanced photocell based on GaN quantum dots

论文作者

Dev, Aditya, Chaudhary, Sumit, Reshamiya, Jay, Chakraborty, Abhishek, Poonia, Vishvendra Singh

论文摘要

在这项工作中,我们提出了一个基于GAN量子点的有效量子增强的固态光电。我们利用GAN QD中强大的内置电场和相邻QD之间的激子偶极偶极联耦合,以打破详细的平衡,从而提高了设备​​性能。该机制比FANO的干扰要强大,我们的结果表明,与经典相比,这种光电器表现出增加的光伏和光电流。数值模拟进一步表明,效率保持积极,并在多量词点系统的有限值下饱和。拟议的量子光电器代表了在实用能量收获设备中利用量子效应的有希望的步骤。

In this work, we propose an efficient quantum-enhanced solid-state photocell based on GaN quantum dots. We exploit the strong built-in electric field in GaN QDs and excitonic dipole-dipole coupling between adjacent QDs to break detailed balance, leading to enhanced device performance. This mechanism is significantly stronger than Fano interference, and our results demonstrate that such a photocell exhibits increased photovoltage and photocurrent compared to its classical counterparts. Numerical simulations further show that the efficiency remains positive and saturates at a finite value for multi-quantum dot systems. The proposed quantum photocell represents a promising step towards harnessing quantum effects in practical energy-harvesting devices.

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