论文标题
基于硅的量子点的射频反射法
Radio frequency reflectometry in silicon-based quantum dots
论文作者
论文摘要
RF反射测量法提供了一种快速，灵敏的方法，用于在封闭式量子点中进行电荷传感和自旋读数。我们将重点放在累积栅极定义的量子点中的RF读数上，其中大型寄生电容构成了挑战。我们描述并测试了两种方法，用于减轻寄生电容的影响，一种通过芯片修饰，第二个通过片外变化。我们证明这些方法可以在Si/Sige量子点中实现高性能电荷读数，在1 $μ$ s的测量时间内达到了99.9％的保真度。
RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that these methods enable high-performance charge readout in Si/SiGe quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 $μ$s.
