论文标题
三维拓扑绝缘子的散装自旋电导率
Bulk spin conductivity of three-dimensional topological insulator
论文作者
论文摘要
我们研究了久保形式中三维拓扑绝缘子的大体状态的自旋电导率。自旋霍尔效应是垂直于施加电压的旋转电流的产生。在三维拓扑绝缘子的情况下，沿$ x $方向施加的电压会沿$ y $ $ $ $ $ $ $ $ y $和$ z $方向产生横向自旋电流。我们发现，由于带的反转，自旋电导率的有限非宇宙值存在。对顶点校正的自旋电导率的贡献增强了填充状态的自旋电导率。这些发现解释了在拓扑绝缘子中观察到的大型自旋电导率。
We study the spin conductivity of the bulk states of three-dimensional topological insulators within Kubo formalism. Spin Hall effect is the generation of the spin current that is perpendicular to the applied voltage. In the case of a three-dimensional topological insulator, applied voltage along $x$ direction generates transverse spin currents along $y$ and $z$ directions with comparable values. We found that a finite non-universal value of the spin conductivity exists in the gapped region due to the inversion of bands. Contribution to the spin conductivity from the vertex corrections enhances the spin conductivity from the filled states. These findings explain the large spin conductivity that has been observed in topological insulators.
