论文标题
4H-SIC低增益雪崩二极管的模拟
Simulation of the 4H-SiC Low Gain Avalanche Diode
论文作者
论文摘要
碳化硅装置（4H-SIC）具有潜在的辐射硬度，高饱和载体速度和低温敏感性。硅低增益雪崩二极管（LGAD）已验证为具有出色的时间性能。因此，在这项工作中引入了4H-SIC LGAD，以用于检测最小电离颗粒（MIP）。我们提供指导，以确定分析分析后增益层的厚度和掺杂水平。增益层厚度$ d_ {gain} = 0.5〜μm $在我们的设计中采用。我们设计了两种不同类型的4H-SIC LGAD，它们具有两种类型的电场，并且通过TCAD工具模拟了相应的泄漏电流，电容和增益。通过分析模拟结果，讨论了两种类型的4H-SIC LGAD的优点和缺点。
Silicon Carbide device (4H-SiC) has potential radiation hardness, high saturated carrier velocity and low temperature sensitivity theoretically. The Silicon Low Gain Avalanche Diode (LGAD) has been verified to have excellent time performance. Therefore, the 4H-SiC LGAD is introduced in this work for application to detect the Minimum Ionization Particles (MIPs). We provide guidance to determine the thickness and doping level of the gain layer after an analytical analysis. The gain layer thickness $d_{gain}=0.5~μm$ is adopted in our design. We design two different types of 4H-SiC LGAD which have two types electric field, and the corresponding leakage current, capacitance and gain are simulated by TCAD tools. Through analysis of the simulation results, the advantages and disadvantages are discussed for two types of 4H-SiC LGAD.
