论文标题
范德华抗铁磁铁中的光诱导的磁相变
Light-induced Magnetic Phase Transition in van der Waals Antiferromagnets
论文作者
论文摘要
基于一个简单的紧密结合模型，我们提出了一种基于一般结论，即在给定系统中的抗铁磁（AFM）相通常比铁磁（FM）的一般结论基于一般的结论，它提出了一般的抗铁磁性磁相变（MPT）的一般理论。光引起的电子激发更喜欢稳定FM态在AFM上，一旦达到了临界光载体浓度（α_C），就会发生从AFM相到FM相的MPT。通过对一系列二维（2D）范德华（VDW）抗fiferromagnet进行第一原理计算，并获得了α_C与内在材料参数之间的线性关系，从而证实了这一理论。重要的是，即使考虑到光激发期间的强烈激子效应，我们的结论仍然是有效的。我们的一般理论提供了新的想法，以实现可逆的阅读写操作，以实现未来的记忆设备。
Based on a simple tight-binding model, we propose a general theory of light-induced magnetic phase transition (MPT) in antiferromagnets based on the general conclusion that the bandgap of antiferromagnetic (AFM) phase is usually larger than that of ferromagnetic (FM) one in a given system. Light-induced electronic excitation prefers to stabilize the FM state over the AFM one, and once the critical photocarrier concentration (α_c) is reached, an MPT from AFM phase to FM phase takes place. This theory has been confirmed by performing first-principles calculations on a series of two-dimensional (2D) van der Waals (vdW) antiferromagnets and a linear relationship between α_c and the intrinsic material parameters is obtained. Importantly, our conclusion is still valid even considering the strong exciton effects during photoexcitation. Our general theory provides new ideas to realize reversible read-write operations for future memory devices.
