论文标题
轴承绝缘子候选euin2as2中磁性诱导的表面状态演变
Surface state evolution induced by magnetic order in axion insulator candidate EuIn2As2
论文作者
论文摘要
通过时间逆转对称性破裂的狄拉克表面状态的扩散可能会意识到凝结物质中的轴突绝缘子状态。尽管做出了巨大的努力，但只有少数物质系统属于此类内在的磁性绝缘体（TI）。最近的理论计算提出了反铁磁性EUIN $ _2 $作为$ _2 $，是具有拓扑表面状态的拓扑非平凡的磁绝缘子。在这里，我们使用扫描隧道显微镜和光谱（STM/STS），并配有密度功能理论（DFT）计算和建模，以探测Euin $ _2 $的表面电子状态为$ _2 $。我们发现一个旋转轨道诱导的散装间隙约为120 meV，位于费米能量上方仅几位MEV，拓扑表面状态驻留。温度依赖性测量提供了低温低于AFM订单的表面状态的部分间隙（〜40 MeV）的证据，该序列随温度的升高而降低，但在$ t_n $以上保持有限
Gapping of Dirac surface states through time reversal symmetry breaking may realize the axion insulator state in condensed matter. Despite tremendous efforts, only a few material systems fall in this category of intrinsic magnetic topological insulators (TI). Recent theoretical calculations proposed the antiferromagnetic EuIn$_2$As$_2$ to be a topologically non-trivial magnetic insulator with gapped surface states. Here we use scanning tunneling microscopy and spectroscopy (STM/STS) complemented with density-functional theory (DFT) calculations and modelling to probe the surface electronic states in EuIn$_2$As$_2$. We find a spin-orbit induced bulk gap of ~120 meV located only a few meV above the Fermi energy, within which topological surface states reside. Temperature dependent measurements provide evidence of the partial gapping (~40 meV) of the surface states at low temperatures below the AFM order, which decreases with increasing temperature but remains finite above $T_N$
