论文标题
依赖深度依赖的电荷收集谱图的研究
Study of depth-dependent charge collection profiles in irradiated pad diodes
论文作者
论文摘要
在这项工作中，使用5.2 GEV电子光束横穿二极管的二极管，并平行于读出电极，测量了非辐照和辐照的150 $ $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ $ m $ $ m $ $。用23 meV质子将四个二极管照射为2、4、8和12E15 {CM}^{ - 2}的1 MeV中子等效的平均。通过展开数据来提取电荷收集效率曲线作为深度的函数。将测量结果与模拟的结果相比，使用文献中的三个辐射损伤模型调整为不同的辐射类型和通知。
In this work, charge collection profiles of non-irradiated and irradiated 150 $μ$m $p$-type pad diodes were measured using a 5.2 GeV electron beam traversing the diode parallel to the readout electrode. Four diodes were irradiated to 1 MeV neutron equivalent fluences of 2, 4, 8, and 12E15 {cm}^{-2} with 23 MeV protons. The Charge Collection Efficiency profiles as a function of depth are extracted by unfolding the data. The results of the measurements are compared to the simulation using three radiation damage models from literature which were tuned to different irradiation types and fluences.
