论文标题
应变诱导的单光子发射器在多层GASE中的确定性定位
Deterministic Localization of Strain-induced Single-photon Emitters in Multilayer GaSe
论文作者
论文摘要
纳米级菌株已成为用于控制原子薄的过渡金属二分法元素（TMDC）中单光子发射器（SPE）的强大工具（1，2）。但是，单层TMDC中的量子发射器通常在环境条件下不稳定。多层二维（2D）TMDC可能是一种解决方案，但它们的量子效率低，导致SPE的亮度较低。在这里，我们报告了纳米阵列中应变诱导的单光子发射器的确定性空间定位。应变控制的量子限制效应引入了良好的子带式光发光，并相应地抑制了宽带边缘光致发光。从3.5开尔文处的量子点样的GASE子带激素发射中观察到清晰的光子抗刺激行为。发现应变依赖性的限制电位和亮度密切相关，这表明调谐和控制SPE的有前途的途径。应变工程GASE SPE的全面研究为开发量子光子技术的2D设备提供了坚实的基础。
Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer two-dimensional (2D) TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced single-photon emitters in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 Kelvin. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.
