论文标题
IRSBSE的热运输特性
Thermal transport properties of IrSbSe
论文作者
论文摘要
我们报告了IRSBSE的热运输研究，该研究以$ p2_13 $空间组的非中心对称立方结构结晶，并显示出狭窄的半导体行为。电导率激活能量[$e_ρ$ = 128（2）MEV]和热电器[$ e_s $ = 17.7（9）MEV]之间的巨大差异，从200到300 K表示偏极运输机制。电阻率随$ exp（t_0/t）^{1/4} $而变化，而在低温下，热电器的变化为$ t^{1/2} $，表明它随着温度降低而演变为Mott的可变范围内跳传导。 IRSBSE显示导热率相对较低的值（$ \ sim $ 1.65 w/k $ \ cdot $ m）和约0.24 mV/k的热电器约100 k，但电导率较差。另一方面，高达15％的IR和SB原子位点上的高空缺陷浓度都表明，通过化学替代或缺陷优化，较高的缺陷耐受性，并表明将来可以提高载流子密度的可能性。
We report a thermal transport study of IrSbSe, which crystallizes in a noncentrosymmetric cubic structure with the $P2_13$ space group and shows a narrow-gap semiconducting behavior. The large discrepancy between the activation energy for conductivity [$E_ρ$ = 128(2) meV] and for thermopower [$E_S$ = 17.7(9) meV] from 200 to 300 K indicates the polaronic transport mechanism. Electrical resistivity varies as $exp(T_0/T)^{1/4}$ and thermopower varies as $T^{1/2}$ at low temperatures, indicating that it evolves into the Mott's variable-range hopping dominant conduction with decreasing temperature. IrSbSe shows relatively low value of thermal conductivity ($\sim$ 1.65 W/K$\cdot$m) and thermopower of about 0.24 mV/K around 100 K, yet poor electrical conductivity. On the other hand, high vacancy defect concentration on both Ir and Sb atomic sites of up to 15\%, suggests high defect tolerance and points to possibility of future improvement of carrier density by chemical substitution or defect optimization.
